共 7 条
- [1] Full band Monte Carlo investigation of electron transport in strained Si grown on Si1-xGex substrates (vol 70, pg 2144, 1997)APPLIED PHYSICS LETTERS, 1997, 71 (23) : 3447 - 3447Bufler, FMGraf, PKeith, SMeinerzhagen, B
- [2] Full band Monte Carlo investigation of electron transport in strained Si grown on Si1-xGex substratesAPPLIED PHYSICS LETTERS, 1997, 70 (16) : 2144 - 2146Bufler, FMGraf, PKeith, SMeinerzhagen, B
- [3] Erratum: 'effects of strain on boron diffusion in Si and Si1-xGex' [appl. phys. lett. 66, 580 (1995)]Applied Physics Letters, 1995, 66 (10):Kuo, P.Hoyt, J.L.Gibbons, J.F.Turner, J.E.Lefforge, D.
- [4] Erratum: 'etch-pit initiation by dissolved oxygen on terraces of H-Si(111)' [Appl. Phys. Lett. 71, 1679 (1997)] Appl Phys Lett, 1 (133):
- [5] ELECTRON-TRANSPORT PROPERTIES OF A STRAINED SI LAYER ON A RELAXED SI1-XGEX SUBSTRATE BY MONTE-CARLO SIMULATIONAPPLIED PHYSICS LETTERS, 1993, 62 (21) : 2661 - 2663MIYATA, HYAMADA, TFERRY, DK
- [6] A Monte Carlo study on the electron-transport properties of high-performance strained-Si on relaxed Si1-xGex channel MOSFETsJOURNAL OF APPLIED PHYSICS, 1996, 80 (09) : 5121 - 5128Roldan, JBGamiz, FLopezVillanueva, JACarceller, JE
- [7] Erratum. 'Heavily Si-doped GaAs grown by low-pressure metalorganic chemical vapor deposition using tertiarybutylarsine and silane' [Appl. Phys. Lett. 60, 489 (1992)]Applied Physics Letters, 1992, 60 (19)Chichibu, S.Iwai, A.Matsumoto, S.Higuchi, H.