Phase stability of Ti3SiC2 at high pressure and high temperature

被引：34

作者：

Qin, Jiaqian ^{[1
]}

He, Duanwei ^{[2
]}

机构：

[1] Chulalongkorn Univ, Met & Mat Sci Res Inst, Bangkok 10330, Thailand

[2] Sichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2013年 / 39卷 / 08期

关键词：

Ti3SiC2; Decomposition; High pressure and high temperature; CARBIDE; BEHAVIOR; NITRIDE; SI;

D O I：

10.1016/j.ceramint.2013.04.111

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Phase stability of Ti3SiC2 was studied under high pressure and high temperature using X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. From the results obtained, the decomposition temperature of Ti3SiC2 decreases quickly against pressure, and the low temperature limits of phase segregation of the sample Ti3SiC2 lie between 1100 degrees C and 1000 degrees C, 1000 degrees C and 900 degrees C, 900 degrees C and 800 degrees C, under high pressures of 3, 4 and 5 GPa, respectively. Ti3SiC2 decomposes to generate TiC, SiC, and TiSix. On the basis of the experimental results, we suggest two decomposition models to explain the phase decomposition of Ti3SiC2 at high pressure and high temperature. (C) 2013 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：9361 / 9367

页数：7

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