High Temperature Stability of SiC/Ti Interface

被引：5

作者：

Ngai, Tungwai Leo ^{[1
]}

Hu, Changxu ^{[1
]}

Zheng, Wei ^{[1
]}

Xie, Heng ^{[1
]}

Li, Yuanyuan ^{[1
]}

机构：

[1] S China Univ Technol, Natl Engn Res Ctr Near Net Shape Forming Metall M, Guangzhou 510640, Guangdong, Peoples R China

来源：

ENERGY, ENVIRONMENT AND BIOLOGICAL MATERIALS | 2011年 / 685卷

关键词：

SiC; interface; diffusion path; thermal stability; SILICON-CARBIDE; TITANIUM;

D O I：

10.4028/www.scientific.net/MSF.685.340

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ti, SiC and their composite materials have been widely used as high temperature structural material. The knowledge of interfacial stability between SiC and Ti is vital in high temperature applications. In this study, SiC/Ti diffusion couples were prepared to investigate the interfacial reactions between SiC and Ti at 1273 K. Phase forming sequence, microstructure and thermal stability of SiC/Ti interface were studied. It was indicated that after annealed at 1273 K for 10 days, 4 reaction layers were formed at the SiC/Ti interface. The diffusion path between SiC and Ti is SiC/Ti3SiC2/Ti5Si3/Ti5Si3+TiC/Ti3Si/Ti. As the annealing time prolong, the thicknesses of these reaction layers increased.

引用

页码：340 / 344

页数：5

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