High temperature stability of bulk Ti3SiC2 materials in air

被引：0
|
作者：
Lee, D. H. [1 ]
Han, Jae-Ho [2 ]
Kim, Young-Do [2 ]
Park, S. W. [3 ]
Lee, D. B. [1 ]
机构：
[1] Sungkyunk Univ, Sch Adv Mat Sci & Engn, Suwon, South Korea
[2] Hanyang Univ, Div Mat Sci & Engn, Seoul, South Korea
[3] KIST, Korea Multifunct Ceram Res Ctr, Seoul, South Korea
来源：
PROGRESS IN POWDER METALLURGY, PTS 1 AND 2 | 2007年 / 534-536卷
关键词：
ternary carbide; Ti3SiC2; chemical stability; oxidation;
D O I：
10.4028/www.scientific.net/MSF.534-536.1037
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The Ti3SiC2 materials were synthesized by hot pressing TiCx and Si powder mixtures. The matrix grains were lamellar, having a small amount of TiCx. The high-temperature stability was investigated by subjecting Ti3SiC2 to high-temperature oxidation up to 1200 degrees C in air. Ti3SiC2 began to oxidize appreciably above 850 degrees C. The oxidation resulted in the formation of the oxide layer that consisted of TiO2 and SiO2 The scales formed were adherent.
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页码：1037 / +
页数：2
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