Synthesis of High-Purity Ti3SiC2 by Microwave Sintering

被引：51

作者：

Wang, Qian ^{[1
,2
]}

Hu, Chunfeng ^{[2
]}

Huang, Qing ^{[2
]}

Cai, Shu ^{[1
]}

Sakka, Yoshio ^{[3
]}

Grasso, Salvatore ^{[4
,5
]}

机构：

[1] Tianjin Univ, Minist Educ, Key Lab Adv Ceram & Machining Technol, Tianjin 300072, Peoples R China

[2] Chinese Acad Sci, NIMTE, Ningbo 315201, Zhejiang, Peoples R China

[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

[4] Queen Mary Univ London, Sch Engn & Mat Sci, London E1 4NS, England

[5] Queen Mary Univ London, Nanoforce Technol Ltd, London E1 4NS, England

来源：

INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY | 2014年 / 11卷 / 05期

基金：

中国国家自然科学基金;

关键词：

FATIGUE-CRACK GROWTH; FRACTURE PROPERTIES; OXIDATION BEHAVIOR; POWDERS; PHASES; SI; TI; CERAMICS;

D O I：

10.1111/ijac.12065

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High-purity ternary laminated compound Ti3SiC2 was successfully synthesized by a microwave heating method in the flowing argon for the first time. The mixtures of titanium, silicon, and graphitic carbon (C-gc) or activated carbon (C-ac) with different molar ratios were used to investigate the reaction mechanisms. It was confirmed that Ti3SiC2 with high purity of 98 vol.% was achieved without the aids of Al. The optimum experimental parameters were determined as Ti/Si/C-gc having the molar ratio of 3/2.2/2, first holding at 1480 degrees C for 30 min, and subsequent dwelling at 1300 degrees C for 60 min.

引用

页码：911 / 918

页数：8

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