p-type doping by B ion implantation into diamond at elevated temperatures

被引：12
|
作者：
Tsubouchi, N
Ogura, M
Kato, H
Ri, SG
Watanabe, H
Horino, Y
Okushi, H
机构：
[1] Natl Inst Adv Ind Sci & Technol, Diamond Res Ctr, AIST, Ikeda, Osaka 5638577, Japan
[2] Natl Inst Adv Ind Sci & Technol, Diamond Res Ctr, AIST, Tsukuba, Ibaraki 3058568, Japan
来源：
DIAMOND AND RELATED MATERIALS | 2006年 / 15卷 / 01期
关键词：
B ion implantation; homoepitaxial diamond film; HPHT synthetic IIa; Hall mobility;
D O I：
10.1016/j.diamond.2005.09.008
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have studied B ion implantation at 400 degrees C into undoped homoepitaxial chemical vapor deposition diamond films and high-pressure and high-temperature (HPHT) synthetic IIa substrates. The highest Hall mobility at room temperature is 268 cm(2)/Vs among B implanted homoepitaxial films, while it is 38 cm(2/)Vs for the B implanted HPHT synthetic IIa substrate. The present result reveals that the quality of a doped layer is strongly dependent upon that of a diamond substrate employed for ion implantation. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：157 / 159
页数：3
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