p-type doping by B ion implantation into diamond at elevated temperatures

被引：12

作者：

Tsubouchi, N

Ogura, M

Kato, H

Ri, SG

Watanabe, H

Horino, Y

Okushi, H

机构：

[1] Natl Inst Adv Ind Sci & Technol, Diamond Res Ctr, AIST, Ikeda, Osaka 5638577, Japan

[2] Natl Inst Adv Ind Sci & Technol, Diamond Res Ctr, AIST, Tsukuba, Ibaraki 3058568, Japan

来源：

关键词：

B ion implantation; homoepitaxial diamond film; HPHT synthetic IIa; Hall mobility;

D O I：

10.1016/j.diamond.2005.09.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied B ion implantation at 400 degrees C into undoped homoepitaxial chemical vapor deposition diamond films and high-pressure and high-temperature (HPHT) synthetic IIa substrates. The highest Hall mobility at room temperature is 268 cm(2)/Vs among B implanted homoepitaxial films, while it is 38 cm(2/)Vs for the B implanted HPHT synthetic IIa substrate. The present result reveals that the quality of a doped layer is strongly dependent upon that of a diamond substrate employed for ion implantation. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：157 / 159

页数：3

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