Damage and ablation of large bandgap dielectrics induced by a 46.9 nm laser beam

被引：34

作者：

Ritucci, A ^{[1
]}

Tomassetti, G

Reale, A

Arrizza, L

Zuppella, P

Reale, L

Palladino, L

Flora, F

Bonfigli, E

Faenov, A

Pikuz, T

Kaiser, J

Nilsen, J

Jankowski, AF

机构：

[1] Univ Aquila, Dept Phys, Lab Nazl Gran Sasso, Ist Nazl Fis Nucl, I-67010 Coppito, Aquila, Italy

[2] Erite Nuove Tecnol Energia & Ambiente, Dipartimento Innova, Div Fis Applicata, CRE Frascati, I-00044 Frascati, Italy

[3] All Russia Sci Res Inst Phys Tech & Radiotech Mea, Multicharged Ion Spectral Data Ctr, Mendeleyevsk 141570, Moscow, Russia

[4] Brno Univ Technol, Inst Engn Phys, Brno 61669, Czech Republic

[5] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

来源：

OPTICS LETTERS | 2006年 / 31卷 / 01期

关键词：

17;

D O I：

10.1364/OL.31.000068

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We applied a 0.3 mJ, 1.7 ns, 46.9 nm soft-x-ray argon laser to ablate the surface of large bandgap dielectrics: CaF2 and LiF crystals. We studied the ablation versus the fluence of the soft-x-ray beam, varying the fluence in the range 0.05-3 J/cm(2). Ablation thresholds of 0.06 and 0.1 J/cm(2) and ablation depths of 14 and 20 nm were found for CaF2 and LiF, respectively. These results define new ablation conditions for these large bandgap dielectrics that can be of interest for the fine processing of these materials. (c) 2006 Optical Society of America.

引用

页码：68 / 70

页数：3

共 50 条

[31] Radiation damage to amorphous carbon thin films irradiated by multiple 46.9 nm laser shots below the single-shot damage threshold
Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague 8, Czech Republic
不详
不详
不详
J Appl Phys, 2009, 9
[32] Characterization of the focused beam from a 10-Hz desktop capillary-discharge 46.9-nm laser
Vysin, Ludek
Burian, Tomas
Chalupsky, Jaromir
Grisham, Michael
Hajkova, Vera
Heinbuch, Scott
Jakubczak, Krzysztof
Martz, Dale
Mocek, Tomas
Pira, Peter
Polan, Jiri
Rocca, Jorge J.
Rus, Bedrich
Sobota, Jaroslav
Juha, Libor
DAMAGE TO VUV, EUV, AND X-RAY OPTICS II, 2009, 7361
[33] Damage/ablation morphology of laser conditioned sapphire under 1064 nm laser irradiation
Jiang, Y.
Xiang, X.
Wang, H. J.
Yuan, X. D.
He, S. B.
Lv, H. B.
Zheng, W. G.
Zu, X. T.
OPTICS AND LASER TECHNOLOGY, 2012, 44 (04): : 948 - 953
[34] Comparison of laser induced damage at 1064 nm and 532 nm to high-reflective film fabricated by electron beam evaporation
Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
不详
Qiangjiguang Yu Lizishu, 2008, 9 (1457-1460):
[35] Laser induced damage of fluoride coatings at 193 nm
Chang, Yanhe
Jin, Chunshui
Li, Chun
Jin, Jingcheng
Zhongguo Jiguang/Chinese Journal of Lasers, 2013, 40 (07):
[36] Comparison of heat induced damage at the saphenofemoral junction after ablation with 1,470 nm laser or radiofrequency
Ozcinar, Evren
Cakici, Mehmet
Korun, Oktay
Han, Unsal
Kiziltepe, Ugursay
VASA-EUROPEAN JOURNAL OF VASCULAR MEDICINE, 2017, 46 (02) : 101 - 107
[37] Multiple shot laser-induced damage in dielectrics with absorbing inclusions
Nathan, V
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1996, 153 (02): : 347 - 354
[38] Theoretical research of multi-pulses laser induced damage in dielectrics
Luo, J. (aby222@tom.com), 1600, Editorial Office of High Power Laser and Particle Beams, P.O. Box 919-805, Mianyang, 621900, China (25):
[39] Femtosecond laser-induced damage threshold of electron beam deposited dielectrics for 1-m class optics
Hervy, Adrien
Gallais, Laurent
Cheriaux, Gilles
Mouricaud, Daniel
OPTICAL ENGINEERING, 2017, 56 (01)
[40] Large Area Surface Ablation and Micropatterning of Transparent Dielectrics with Femtosecond UV Laser Pulses
Stonyte, Dominyka
Jukna, Vytautas
Butkus, Simas
Paipulas, Domas
2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC), 2021,

← 1 2 3 4 5 →