Damage and ablation of large bandgap dielectrics induced by a 46.9 nm laser beam

被引：34
|
作者：
Ritucci, A [1 ]
Tomassetti, G
Reale, A
Arrizza, L
Zuppella, P
Reale, L
Palladino, L
Flora, F
Bonfigli, E
Faenov, A
Pikuz, T
Kaiser, J
Nilsen, J
Jankowski, AF
机构：
[1] Univ Aquila, Dept Phys, Lab Nazl Gran Sasso, Ist Nazl Fis Nucl, I-67010 Coppito, Aquila, Italy
[2] Erite Nuove Tecnol Energia & Ambiente, Dipartimento Innova, Div Fis Applicata, CRE Frascati, I-00044 Frascati, Italy
[3] All Russia Sci Res Inst Phys Tech & Radiotech Mea, Multicharged Ion Spectral Data Ctr, Mendeleyevsk 141570, Moscow, Russia
[4] Brno Univ Technol, Inst Engn Phys, Brno 61669, Czech Republic
[5] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
来源：
OPTICS LETTERS | 2006年 / 31卷 / 01期
关键词：
17;
D O I：
10.1364/OL.31.000068
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We applied a 0.3 mJ, 1.7 ns, 46.9 nm soft-x-ray argon laser to ablate the surface of large bandgap dielectrics: CaF2 and LiF crystals. We studied the ablation versus the fluence of the soft-x-ray beam, varying the fluence in the range 0.05-3 J/cm(2). Ablation thresholds of 0.06 and 0.1 J/cm(2) and ablation depths of 14 and 20 nm were found for CaF2 and LiF, respectively. These results define new ablation conditions for these large bandgap dielectrics that can be of interest for the fine processing of these materials. (c) 2006 Optical Society of America.
引用
收藏
页码：68 / 70
页数：3
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