Two-dimensional model for the subthreshold slope in deep-submicron Fully-Depleted SOI MOSFET's

被引：0
|
作者：
van Meer, H [1 ]
De Meyer, K [1 ]
机构：
[1] IMEC, STDI Div, B-3001 Louvain, Belgium
来源：
SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001 | 2001年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 2D analytical model for the calculation of the subthreshold slope has been derived for deep-submicron Fully-Depleted SOI MOSFET's using a Green's function solution technique. The accuracy of the equations has been verified by a 2D numerical device simulator. It is shown that the analytically derived model for the subthreshold slope is in good agreement with 2D numerical simulation data.
引用
收藏
页码：238 / 241
页数：4
相关论文
共 50 条
12345