Exploring the novel characteristics of fully depleted dual-material gate (DMG) SOI MOSFET using two-dimensional numerical simulation studies

被引：5
|
作者：
Chaudhry, A [1 ]
Kumar, MJ [1 ]
机构：
[1] Indian Inst Technol, Dept Elect Engn, Delhi, India
来源：
17TH INTERNATIONAL CONFERENCE ON VLSI DESIGN, PROCEEDINGS: DESIGN METHODOLOGIES FOR THE GIGASCALE ERA | 2004年
关键词：
D O I：
10.1109/ICVD.2004.1260998
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The novel features of a fully depleted (FD) dual-material gate (DMG) SOI MOSFET are explored theoretically and compared with those of a compatible SOI MOSFET The two-dimensional (2-D) numerical simulation studies demonstrate the novel features as threshold voltage roll-up and simultaneous transconductance enhancement and suppression of short-channel effects (SCE's) offered by the DMG SOI MOSFET. Moreover, these unique features can be controlled by engineering the work function and length of the gate material. This work illustrates the benefits of high performance DMG SOI MOS devices over their single material gate (SMG) counterparts and provides an incentive for their experimental exploration.
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页码：662 / 665
页数：4
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