Effect of postoxidation annealing on Si/SiO2 interface roughness

被引：5

作者：

Chen, XD ^{[1
]}

Gibson, JM ^{[1
]}

机构：

[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999年 / 146卷 / 08期

关键词：

D O I：

10.1149/1.1392047

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We use a plan-view transmission electron microscope technique to unambiguously image the "physical" interface position between Si and furnace grown SiO2 layers. The effect of postoxidation annealing on the interface roughness of Si/SiO2 was studied with this technique. While no obvious effect due to postoxidation annealing on roughness was observed for silicon (111) a postoxidation annealing at 900 degrees C dramatically removed roughness at Si(100)/SiO2 interfaces. A model was developed to explain our experimental results based on the idea of kinetic smoothening and oxidation induced roughening. Qualitative agreement has been reached. (C) 1999 The Electrochemical Society. S0013-4651(98)05-046-0. All rights reserved.

引用

页码：3032 / 3038

页数：7

共 50 条

[41] THE ROLE OF SIO IN SI OXIDATION AT A SI/SIO2 INTERFACE
RAIDER, SI
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C136 - C136
[42] Effect of the SiO2/Si interface on self-diffusion in SiO2 upon oxidation
Uematsu, Masashi
Ibano, Kenzo
Itoh, Kohei M.
DIFFUSION IN SOLIDS AND LIQUIDS III, 2008, 273-276 : 685 - 692
[43] Effect of Si/SiO2 interface on silicon and boron diffusion in thermally grown SiO2
Fukatsu, S
Itoh, KM
Uematsu, M
Kageshima, H
Takahashi, Y
Shiraish, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (11B): : 7837 - 7842
[44] Effect of annealing on preferred orientations in the Cu/SiO2 and Cu/SiO2/Si(100) interfaces
Bagalagel, S.
Shirokoff, J.
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2008, 479 (1-2): : 112 - 116
[45] MICROVOIDS AT THE SIO2/SI INTERFACE
NIELSEN, B
LYNN, KG
WELCH, DO
LEUNG, TC
RUBLOFF, GW
PHYSICAL REVIEW B, 1989, 40 (02): : 1434 - 1437
[46] SI/SIO2 INTERFACE STRUCTURES IN LASER-RECRYSTALLIZED SI ON SIO2
OGURA, A
AIZAKI, N
APPLIED PHYSICS LETTERS, 1989, 55 (06) : 547 - 549
[47] THE SI(001)/SIO2 INTERFACE
OURMAZD, A
FUOSS, PH
BEVK, J
MORAR, JF
APPLIED SURFACE SCIENCE, 1989, 41-2 : 365 - 371
[48] DEFECTS AT THE SI/SIO2 INTERFACE OF SIO2 PRECIPITATES IN SILICON
HOBBS, A
BARKLIE, RC
REESON, K
HEMMENT, PLF
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE NEUE FOLGE, 1987, 151 : 251 - 257
[49] SCALING ANALYSIS OF SIO2/SI INTERFACE ROUGHNESS BY ATOMIC-FORCE MICROSCOPY
YOSHINOBU, T
IWAMOTO, A
IWASAKI, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 383 - 387
[50] A quantitative correlation between inversion layer mobility and Si/SiO2 interface roughness
Fang, SJ
Lin, HC
Snyder, JP
Helms, CR
Yamanaka, T
PHYSICS AND CHEMISTRY OF SIO(2) AND THE SI-SIO(2) INTERFACE-3, 1996, 1996, 96 (01): : 329 - 337

← 1 2 3 4 5 →