Effect of postoxidation annealing on Si/SiO2 interface roughness

被引：5
|
作者：
Chen, XD [1 ]
Gibson, JM [1 ]
机构：
[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999年 / 146卷 / 08期
关键词：
D O I：
10.1149/1.1392047
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We use a plan-view transmission electron microscope technique to unambiguously image the "physical" interface position between Si and furnace grown SiO2 layers. The effect of postoxidation annealing on the interface roughness of Si/SiO2 was studied with this technique. While no obvious effect due to postoxidation annealing on roughness was observed for silicon (111) a postoxidation annealing at 900 degrees C dramatically removed roughness at Si(100)/SiO2 interfaces. A model was developed to explain our experimental results based on the idea of kinetic smoothening and oxidation induced roughening. Qualitative agreement has been reached. (C) 1999 The Electrochemical Society. S0013-4651(98)05-046-0. All rights reserved.
引用
收藏
页码：3032 / 3038
页数：7
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