THE SI(001)/SIO2 INTERFACE

被引：18
|
作者：
OURMAZD, A
FUOSS, PH
BEVK, J
MORAR, JF
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
APPLIED SURFACE SCIENCE | 1989年 / 41-2卷
关键词：
D O I：
10.1016/0169-4332(89)90086-X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The atomic structure of Si(001)/SiO2 interfaces, produced by the oxidation of initially smooth Si surfaces, is discussed. Soft X-ray spectroscopy shows the detailed interfacial atomic configuration to depend sensitively on the preparation conditions. © 1989.
引用
收藏
页码：365 / 371
页数：7
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