The balanced photodetector buried with semi-insulating InP

被引：0
|
作者：
Nakaji, M [1 ]
Ishimura, E [1 ]
Hanamaki, Y [1 ]
Shimomura, K [1 ]
Aoyagi, T [1 ]
Ishikawa, T [1 ]
机构：
[1] Mitsubishi Electr Corp, High Frequency & Opt Device Works, Itami, Hyogo 6648641, Japan
来源：
2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS) | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The well-balanced twin photodiodes with over 45GHz bandwidth on one chip have been developed. It is realized by removing Si pile-up region due to contamination, which connects waveguide region and bonding pad electrically.
引用
收藏
页码：443 / 444
页数：2
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