InP:Fe semi-insulating layers by chemical beam epitaxy

被引：8
|
作者：
Rigo, C
Madella, M
Papuzza, C
Cacciatore, C
Stano, A
Gasparotto, A
Salviati, G
Nasi, L
机构：
[1] CNR,MASPEC,I-43100 PARMA,ITALY
[2] UNIV PADUA,DIPARTIMENTO FIS G GALILEI,PADUA,ITALY
来源：
JOURNAL OF CRYSTAL GROWTH | 1996年 / 164卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(96)00018-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
High resistivity InP layers were grown by chemical beam epitaxy evaporating metallic iron with the use of a conventional Knudsen cell. The structural and optical characteristics of the epilayers were analysed by secondary ion mass spectroscopy, high resolution X-ray diffraction, photoluminescence, absorption and transmission electron microscopy, Electrical measurements were performed on lithographically defined mesa diodes. Iron concentrations ranging from 7x10(15) to 4x10(19) atoms/cm(3) were investigated. Mirror-like morphologies were obtained for iron concentrations up to 7x10(18) atoms/cm(3) The peak resistivity was 1.3x10(8) Omega . cm. For dopant concentrations higher than 1x10(18) atoms/cm(3), a drop in resistivity occurred. This could be related to the formation of precipitates as confirmed by transmission electron microscopy. InGaAs/InP structures with iron-doped wells were also studied.
引用
收藏
页码：430 / 433
页数：4
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