Uniformity of Iron-Doped Semi-Insulating InP Wafers

被引：0
|
作者：
Kang Xiaodong [1 ,3 ,5 ]
Mao Luhong [2 ]
Yang Ruixia [4 ]
Zhou Xiaolong [1 ,4 ]
Sun Tongnian [1 ]
Sun Niefeng [1 ,2 ]
机构：
[1] Hebei Semicond Res Inst, ASIC, Natl Key Lab, Shyiazhuang 050051, Peoples R China
[2] Tianjin Univ, Sch Elect Informat Engn, Tianjin 300072, Peoples R China
[3] Tianjin Univ, Sch Comp Sci & Technol, Tianjin 300072, Peoples R China
[4] Hebei Univ Technol, Sch Informat Engn, Tianjin 300130, Peoples R China
[5] Tianjin Med Univ, Dept Med Image, Tianjin 300070, Peoples R China
来源：
JOURNAL OF RARE EARTHS | 2007年 / 25卷
基金：
中国国家自然科学基金;
关键词：
InP; semi-insulating; uniformity;
D O I：
暂无
中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
50 similar to 100 mm diameter iron-doped InP crystal was grown by in-situ phosphorous injection synthesis liquid encapsulated Czochraski (LEC) method. Samples were characterized by high speed photoluminescence (Pl) mapping and Etch pit density (EPD) mapping method. The perfection of these samples were studied and compared. 100 mm diameter InP single crystals were successfully developed by rapid P-injection in-situ synthesis LEC method. The EPD across the ingot was less than 5 x 10(4) cm(-2), which was almost equal to the crystals of diameter 50 and 76 mm. By adjusting the thermal field and ensuring the chemical stoichiometry, InP crystals of larger diameters and good performance could be developed.
引用
收藏
页码：360 / 362
页数：3
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