Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs

被引：2

作者：

Beltran, Ana M. ^{[1
,2
]}

Schamm-Chardon, Sylvie ^{[1
]}

Mortet, Vincent ^{[2
]}

Lefebvre, Matthieu ^{[2
]}

Bedel-Pereira, Elena ^{[2
]}

Cristiano, Fuccio ^{[2
]}

Strenger, Christian ^{[3
]}

Haeublein, Volker ^{[3
]}

Bauer, Anton J. ^{[3
]}

机构：

[1] Univ Toulouse, CEMES CNRS, NMat Grp, BP 94347, F-31055 Toulouse 4, France

[2] Univ Toulouse 1, LAAS CNRS, F-31077 Toulouse, France

[3] Fraunhofer IISB, D-91058 Erlangen, Germany

来源：

HETEROSIC & WASMPE 2011 | 2012年 / 711卷

关键词：

4H-SiC MOSFETs; HRTEM; spatially-resolved EELS; SiC/SiO2; interface; Hall mobility; INTERFACE; 4H;

D O I：

10.4028/www.scientific.net/MSF.711.134

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

4H-SiC presents great advantages for its use in power electronic devices working at particular conditions. However the development of MOSFETs based on this material is limited by mobility degradation. N-channel SiC MOSFETs were manufactured on p-type epitaxial and p-implanted substrates and the electron mobility in the inversion channels was measured to be correlated with their structural and chemical properties determined by transmission electron microscopy methods. With regard to what was previously discussed in the literature, transition layer formation and carbon distribution across the SiC-SiO2 interface are considered in relation with the measured low electron mobility of the MOSFETS.

引用

页码：134 / +

页数：2

共 50 条

[21] Low Frequency Noise in 4H-SiC MOSFETs
Rumyantsev, Sergey L.
Shur, Michael S.
Levinshtein, Michael E.
Ivanov, Pavel A.
Palmour, John W.
Das, Mrinal K.
Hull, Brett A.
SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 817 - 820
[22] Improved implanted RESURF MOSFETS in 4H-SiC
Banerjee, S., 2000, IEEE, Piscataway, NJ, United States
[23] Design and fabrication of 4H-SiC RF MOSFETs
Gudjonsson, Gudjon I.
Allerstam, Fredrik
Sveinbjornsson, Einar O.
Hjelmgren, Hans
Nilsson, Per-Ake
Andersson, Kristoffer
Zirath, Herbert
Rodle, Thomas
Jos, Rik
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (12) : 3138 - 3145
[24] Characterization and analytical modeling of 4H-SiC VDMOSFET in the forward operation
Dinh-Lam Dang
Guichard, Sophie
Urbain, Matthieu
Rael, Stephane
2016 18TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'16 ECCE EUROPE), 2016,
[25] Hall effect characterization of 4H-SiC MOSFETs: Influence of nitrogen channel implantation
Mortet, V.
Bedel-Pereira, E.
Bobo, J. F.
Cristiano, F.
Strenger, C.
Uhnevionak, V.
Burenkov, A.
Bauer, A. J.
SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 525 - +
[26] Physical and electrical characterization of WN Schottky contacts on 4H-SiC
Noblanc, O.
Arnodo, C.
Cassette, S.
Brylinski, C.
Kakanakova-Georgieva, A.
Marinova, Ts.
Kassamakova, L.
Kakanakov, R.
Pecz, B.
Sulyok, A.
Radnoczi, G.
Materials Science Forum, 1998, 264-268 (pt 2): : 817 - 820
[27] Electrical characterization of laser-irradiated 4H-SiC wafer
Salama, I
Quick, NR
Kar, A
Chung, G
DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS AND DEVICES III, 2002, 719 : 73 - 78
[28] Electrical characterization of erbium-implanted 4H-SiC epilayers
Reshanov, SA
Klettke, O
Pensl, G
Choyke, WJ
SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 459 - 462
[29] Electrical and optical characterization of 4H-SiC diodes for particle detection
Schifano, R
Vinattieri, A
Bruzzi, M
Miglio, S
Lagomarsino, S
Sciortino, S
Nava, F
JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)
[30] Physical and electrical characterization of WN Schottky contacts on 4H-SiC
Noblanc, O
Arnodo, C
Cassette, S
Brylinski, C
Kakanakova-Georgieva, A
Marinova, T
Kassamakova, L
Kakanakov, R
Pecz, B
Sulyok, A
Radnoczi, G
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 817 - 820

← 1 2 3 4 5 →