Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs

被引：2

作者：

Beltran, Ana M. ^{[1
,2
]}

Schamm-Chardon, Sylvie ^{[1
]}

Mortet, Vincent ^{[2
]}

Lefebvre, Matthieu ^{[2
]}

Bedel-Pereira, Elena ^{[2
]}

Cristiano, Fuccio ^{[2
]}

Strenger, Christian ^{[3
]}

Haeublein, Volker ^{[3
]}

Bauer, Anton J. ^{[3
]}

机构：

[1] Univ Toulouse, CEMES CNRS, NMat Grp, BP 94347, F-31055 Toulouse 4, France

[2] Univ Toulouse 1, LAAS CNRS, F-31077 Toulouse, France

[3] Fraunhofer IISB, D-91058 Erlangen, Germany

来源：

HETEROSIC & WASMPE 2011 | 2012年 / 711卷

关键词：

4H-SiC MOSFETs; HRTEM; spatially-resolved EELS; SiC/SiO2; interface; Hall mobility; INTERFACE; 4H;

D O I：

10.4028/www.scientific.net/MSF.711.134

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

4H-SiC presents great advantages for its use in power electronic devices working at particular conditions. However the development of MOSFETs based on this material is limited by mobility degradation. N-channel SiC MOSFETs were manufactured on p-type epitaxial and p-implanted substrates and the electron mobility in the inversion channels was measured to be correlated with their structural and chemical properties determined by transmission electron microscopy methods. With regard to what was previously discussed in the literature, transition layer formation and carbon distribution across the SiC-SiO2 interface are considered in relation with the measured low electron mobility of the MOSFETS.

引用

页码：134 / +

页数：2

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