High-κ gate dielectric materials

A number of materials are currently under consideration to replace SiO2 and SiOxNy as a key component of Si-based integrated-circuit technology: the gate dielectric for the transistor. Selecting new high-kappa gate dielectric materials systems requires the consideration of many properties, which may be divided into two broad categories: (1) fundamental materials properties that include permittivity, barrier height, stability in direct contact with Si. and film morphology; and (2) device processing, integration, and performance issues such as interface quality, gate compatibility, process compatibility, and reliability. The issues that both of these categories encompass must be simultaneously addressed for any successful, manufacturable gate dielectric solution. We provide an overview of these issues in light of the accompanying articles in this issue of MRS Bulletin.