New Analytical Model for Nanoscale Tri-Gate SOI MOSFETs Including Quantum Effects

被引：16
|
作者：
Vimala, P. [1 ]
Balamurugan, N. B. [1 ]
机构：
[1] Thiagarajar Coll Engn, Dept Elect & Commun Engn, Madurai 625005, Tamil Nadu, India
来源：
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2014年 / 2卷 / 01期
关键词：
Device modeling; energy quantization; inversion charge; Poisson-Schrodinger equation; tri-gate MOSFET; THRESHOLD VOLTAGE; COMPACT MODEL; DEVICE; CHARGE;
D O I：
10.1109/JEDS.2014.2298915
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, an analytical model for tri-Gate (TG) MOSFETs considering quantum effects is presented. The proposed model is based on the analytical solution of Schrodinger-Poisson's equation using variational approach. An analytical expression of the inversion charge distribution function (ICDF) or wave function for the TG MOSFETs has been developed. This obtained ICDF is used to calculate the device parameters, such as the inversion charge centroid, threshold voltage, inversion charge, gate capacitance, and drain current. These parameters are modeled for various device dimensions and applied bias. The results are validated against the TCAD simulation results.
引用
收藏
页码：1 / 7
页数：7
相关论文
共 50 条
  • [41] A Threshold Voltage Model of Tri-Gate Junctionless Field-Effect Transistors Including Substrate Bias Effects
    Gola, Deepti
    Singh, Balraj
    Tiwari, Pramod Kumar
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (09) : 3632 - 3638
  • [42] On the gate capacitance limits of nanoscale DG and FD SOI MOSFETs
    Ge, LX
    Gámiz, F
    Workman, GO
    Veeraraghavan, S
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (04) : 753 - 758
  • [43] ANALYTICAL DEVICE MODEL OF SOI MOSFETS INCLUDING SELF-HEATING EFFECT
    YASUDA, N
    UENO, S
    TANIGUCHI, K
    HAMAGUCHI, C
    YAMAGUCHI, Y
    NISHIMURA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B): : 3677 - 3684
  • [44] Novel Charge Pumping Method Applied to Tri-Gate MOSFETs for Reliability Characterization
    Bittel, B.
    Novak, S.
    Ramey, S.
    Padiyar, S.
    Ryan, J. T.
    Campbell, J. P.
    Cheung, K. P.
    2015 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW), 2015, : 69 - 72
  • [45] Analytical Compact Model for Lightly Doped Nanoscale Ultrathin-Body and Box SOI MOSFETs With Back-Gate Control
    Karatsori, Theano A.
    Tsormpatzoglou, Andreas
    Theodorou, Christoforos G.
    Ioannidis, Eleftherios G.
    Haendler, Sebastien
    Planes, Nicolas
    Ghibaudo, Gerard
    Dimitriadis, Charalabos A.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (10) : 3117 - 3124
  • [46] Analytical Unified Drain Current Model of Long-Channel Tri-Gate FinFETs
    Tsormpatzoglou, A.
    Fasarakis, N.
    Tassis, D. H.
    Pappas, I.
    Papathanasiou, K.
    Dimitriadis, C. A.
    2012 28TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL), 2012, : 115 - 118
  • [47] High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz
    Zota, C. B.
    Lindelow, F.
    Wernersson, L. -E.
    Lind, E.
    ELECTRONICS LETTERS, 2016, 52 (22) : 1869 - 1870
  • [48] NEURAL NETWORK FOR THE QUANTUM CORRECTION OF NANOSCALE SOI MOSFETS
    李尊朝
    蒋耀林
    张莉丽
    Academic Journal of Xi'an Jiaotong University, 2006, (02) : 118 - 121
  • [49] A quasi-two dimensional model for fully depleted single gate SOI MOSFETs including temperature effects
    Gharabagi, R
    PROCEEDINGS OF THE IEEE 2000 NATIONAL AEROSPACE AND ELECTRONICS CONFERENCE: ENGINEERING TOMORROW, 2000, : 508 - 515
  • [50] Mobility model for advanced SOI-MOSFETs including back-gate contribution
    Zenitani, Hiroshi
    Kikuchihara, Hideyuki
    Feldmann, Uwe
    Miyamoto, Hidenori
    Mattausch, Hans Juergen
    Miura-Mattausch, Michiko
    Nakagawa, Tadashi
    Sugii, Nobuyuki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (04)
12345