Optical field effect transistor with an indium tin oxide gate electrode

被引：0

作者：

Fodje, JB ^{[1
]}

Mukherjee, D ^{[1
]}

Hogarth, CA ^{[1
]}

机构：

[1] S BANK UNIV,SCH EEIE,LONDON SE1 0AA,ENGLAND

来源：

OPTICAL CHARACTERIZATION TECHNIQUES FOR HIGH-PERFORMANCE MICROELECTRONIC DEVICE MANFACTURING III | 1996年 / 2877卷

关键词：

OPFET; ITO; barrier height enhancement; optoelectronic devices;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：36 / 41

页数：6

共 50 条

[21] Gas sensor based on interdigitated gate electrode field effect transistor
Zhang, Tong
Qiang, Sheng
Lewis, Frank
Kolesar, Edward S.
Wu, Yalin
Chi, Xiaozhu
Zhang, Hongquan
RARE METAL MATERIALS AND ENGINEERING, 2006, 35 : 140 - 142
[22] Interdigitated Extended Gate Field Effect Transistor Without Reference Electrode
Ghusoon M. Ali
Journal of Electronic Materials, 2017, 46 : 713 - 717
[23] Effect of Ag thickness on electrical transport and optical properties of indium tin oxide-Ag-indium tin oxide multilayers
Indluru, A.
Alford, T. L.
JOURNAL OF APPLIED PHYSICS, 2009, 105 (12)
[24] Improved Characteristics for OTFT with HfO2 Gate Dielectric by Using Chlorinated Indium Tin Oxide Gate Electrode
Tang, W. M.
Helander, M. G.
Greiner, M. T.
Lu, Z. H.
Ng, W. T.
2016 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2016, : 365 - 368
[25] Effect of vacuum annealing on indium tin oxide transistor with nanometer-thin channel
Gao, Qingguo
Li, Jiabing
Cao, Tianfan
Pan, Xinjian
Liu, Ping
Liu, Liming
VACUUM, 2024, 222
[26] Operation of ferroelectric gate field-effect transistor memory with intermediate electrode using polycrystalline capacitor and metal-oxide-semiconductor field-effect transistor
Trinh, Bui Nguyen Quoc
Horita, Susumu
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (9B): : 7341 - 7344
[27] Operation of ferroelectric gate field-effect transistor memory with intermediate electrode using polycrystalline capacitor and metal-oxide-semiconductor field-effect transistor
Trinh, Bui Nguyen Quoc
Horita, Susumu
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (9 B): : 7341 - 7344
[28] Dual-gate operation of a carbon nanotube field effect transistor with a local gate electrode
Park, Ji-Yong
Kim, Yongsun
Oh, Young Mu
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 51 (04) : 1357 - 1361
[29] Effect of Nature of Dopants on Electronic and Optical Properties of Indium Tin Oxide
Tripathi, Madhvendra Nath
Kawazoe, Yoshiyuki
ADVANCED SCIENCE LETTERS, 2015, 21 (09) : 2697 - 2700
[30] CATALYTIC MODIFICATION OF INDIUM TIN OXIDE ELECTRODE SURFACES
HO, SI
RAJESHWAR, K
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (03) : 768 - 769

← 1 2 3 4 5 →