Optical field effect transistor with an indium tin oxide gate electrode

被引：0
|
作者：
Fodje, JB [1 ]
Mukherjee, D [1 ]
Hogarth, CA [1 ]
机构：
[1] S BANK UNIV,SCH EEIE,LONDON SE1 0AA,ENGLAND
来源：
OPTICAL CHARACTERIZATION TECHNIQUES FOR HIGH-PERFORMANCE MICROELECTRONIC DEVICE MANFACTURING III | 1996年 / 2877卷
关键词：
OPFET; ITO; barrier height enhancement; optoelectronic devices;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：36 / 41
页数：6
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