Operation of ferroelectric gate field-effect transistor memory with intermediate electrode using polycrystalline capacitor and metal-oxide-semiconductor field-effect transistor

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作者：
Trinh, Bui Nguyen Quoc [1 ]
Horita, Susumu [1 ]
机构：
[1] Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-1292, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 9 B期
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页码：7341 / 7344
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