Study on the interface structure: Diamond thin film epitaxy on (001) silicon substrate

被引：1
|
作者：
Meng, QB
Fei, YJ
Kang, J
Xiong, YY
Lin, ZD
Feng, KA
机构：
[1] Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 10008, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 10008, Peoples R China
[3] Chinese Acad Sci, Changchun Inst Appl Chem, Changchun 130022, Peoples R China
来源：
MODERN PHYSICS LETTERS B | 1999年 / 13卷 / 3-4期
关键词：
D O I：
10.1142/S0217984999000178
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An interesting interface structure between diamond film and silicon substrate has been observed. That is, according to the deformation of the diamond film crystal sturcture, a strictly 3:2 matching of the two lattices across the interface is obtained. This result clearly indicates that misfit dislocations at the interface and "epitaxial tilting" are not the only two ways to overcome the 1.5% residual misfit.
引用
收藏
页码：125 / 129
页数：5
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