RHEED and AFM studies of homoepitaxial diamond thin film on C(001) substrate produced by microwave plasma CVD

被引：10
|
作者：
Takami, T
Suzuki, K
Kusunoki, I
Sakaguchi, I
Nishitani-Gamo, M
Ando, T
机构：
[1] Tohoku Univ, Sci Measurements Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Natl Inst Res Inorgan Mat, Japan Sci & Technol Corp, Core Res Evolut Sci & Technol, Tsukuba, Ibaraki 3050044, Japan
来源：
DIAMOND AND RELATED MATERIALS | 1999年 / 8卷 / 2-5期
关键词：
atomic force microscopy; CVD; homoepitaxy; reflection high-energy electron diffraction;
D O I：
10.1016/S0925-9635(98)00391-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A surface of a diamond thin film grown homoepitaxially on a C(001) substrate by microwave plasma chemical vapor deposition (CVD) has been studied using reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM). The RHEED pattern showed the C(001)2 x 1/1 x2 double-domain structure. The AFM images taken from the same sample in air showed 1 x 1 but locally 2 x 1 structure, which was confirmed by the Fourier transformed pattern of the AFM image. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：701 / 704
页数：4
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