Study on the interface structure: Diamond thin film epitaxy on (001) silicon substrate

被引：1
|
作者：
Meng, QB
Fei, YJ
Kang, J
Xiong, YY
Lin, ZD
Feng, KA
机构：
[1] Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 10008, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 10008, Peoples R China
[3] Chinese Acad Sci, Changchun Inst Appl Chem, Changchun 130022, Peoples R China
来源：
MODERN PHYSICS LETTERS B | 1999年 / 13卷 / 3-4期
关键词：
D O I：
10.1142/S0217984999000178
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An interesting interface structure between diamond film and silicon substrate has been observed. That is, according to the deformation of the diamond film crystal sturcture, a strictly 3:2 matching of the two lattices across the interface is obtained. This result clearly indicates that misfit dislocations at the interface and "epitaxial tilting" are not the only two ways to overcome the 1.5% residual misfit.
引用
收藏
页码：125 / 129
页数：5
相关论文
共 50 条
  • [21] Silicon diamond interface sand structure
    Obraztsov, AN
    Guseva, MB
    Petrukhin, AG
    Petrov, AV
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (03) : 1112 - 1114
  • [22] Local heteroepitaxy of diamond on silicon (100): A study of the interface structure
    MaillardSchaller, E
    Kuttel, OM
    Groning, P
    Groning, O
    Agostino, RG
    Aebi, P
    Schlapbach, L
    Wurzinger, P
    Pongratz, P
    PHYSICAL REVIEW B, 1997, 55 (23): : 15895 - 15904
  • [23] Effect of point defects on lattice constant in MgO thin film deposited on silicon(001) substrate
    Kaneko, S.
    Nagano, T.
    Ito, T.
    Yasui, M.
    Ozawa, T.
    Soga, M.
    Motoizumi, Y.
    Funakubo, H.
    Yoshimoto, M.
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2012, 58 (01):
  • [24] X-RAY STUDY OF THE INTERFACE LAYER BETWEEN LOW-TEMPERATURE DEPOSITED DIAMOND FILM AND THE SILICON SUBSTRATE
    LU, FX
    JIANG, GS
    YANG, BX
    CHEN, J
    WANG, JJ
    YUAN, Y
    DIAMOND AND RELATED MATERIALS, 1993, 2 (2-4) : 575 - 579
  • [25] Local strain in interface: Origin of grain tilting in diamond (001) silicon (001) heteroepitaxy
    Jiang, X
    Zhang, RQ
    Yu, G
    Lee, ST
    PHYSICAL REVIEW B, 1998, 58 (23) : 15351 - 15354
  • [26] Nucleation and growth of diamond film on porous silicon substrate
    Liao, Y
    Fang, RC
    Ye, F
    Shao, QY
    Wang, GZ
    MODERN PHYSICS LETTERS B, 1999, 13 (05): : 159 - 165
  • [27] EPITAXIAL DIAMOND THIN-FILMS ON (001) SILICON SUBSTRATES
    JIANG, X
    KLAGES, CP
    ZACHAI, R
    HARTWEG, M
    FUSSER, HJ
    APPLIED PHYSICS LETTERS, 1993, 62 (26) : 3438 - 3440
  • [28] STUDY OF ZNSE AND CDSE THIN-FILM EPITAXY ON GERMANIUM AND SILICON SUBSTRATES
    BRUK, LI
    KABIR, SM
    KOROTKOV, VA
    LEONDAR, VV
    SIMASHKEVICH, AV
    TSARAN, VM
    CRYSTAL RESEARCH AND TECHNOLOGY, 1990, 25 (08) : 897 - 902
  • [29] Predicting the interface structure of Nb thin film grown on MgO(110) substrate
    Fang, Y.
    Zhang, L. Y.
    Zhang, H. L.
    MATERIALS LETTERS, 2016, 183 : 338 - 340
  • [30] Interface atomic structure of LaCuOSe:Mg epitaxial thin film and MgO substrate
    Tohei, Tetsuya
    Mizoguchi, Teruyasu
    Hiramatsu, Hidenori
    Hosono, Hideo
    Ikuhara, Yuichi
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2010, 173 (1-3): : 229 - 233
12345