Symmetry consideration of Raman modes in Nd-doped lead zirconate titanate thin films for structure characterization

被引:52
|
作者
Frantti, J
Lantto, V
Lappalainen, J
机构
[1] Microlectron. and Mat. Physic Labs., University of Oulu, FIN-90571 Oulu
关键词
D O I
10.1063/1.360895
中图分类号
O59 [应用物理学];
学科分类号
摘要
A short group-theoretical discussion is given of phonon symmetries in different phases of the Pb(ZrxTi1-x)O-3 (PZT) perovskite together with a description of the degeneracy splitting in consequence of the long-range Coulomb fields both in the paraelectric cubic phase and ferroelectric tetragonal and trigonal phases. Phonon symmetries together with the frequency splitting are used for the consideration of Raman modes, measured from Nd-doped PZT thin films with Zr concentrations below or near to the morphotropic phase boundary between the ferroelectric tetragonal and trigonal phases. Raman spectroscopy was used in addition to x-ray diffraction experiments for the characterization of the phase structure in the films. Raman spectra were measured at room temperature and also at some higher temperatures up to 318 degrees C. A XeCl-excimer laser was used for the pulsed laser ablation of thin films from a Pb0.97Nd0.02(Zr0.55Ti0.45)O-3 target on sapphire and MgO substrates without substrate heating. After ablation, the amorphous films were annealed at temperatures between 700 and 900 degrees C. Energy dispersive spectroscopy of x rays was used for the composition analysis of the films. Different film compositions were obtained by using different laser-beam fluences during the ablation process. The Zr/(Zr+Ti) ratio in the films varied between 0.32 and 0.50. (C) 1996 American Institute of Physics.
引用
收藏
页码:1065 / 1072
页数:8
相关论文
共 50 条
  • [41] Microstructural characterization of sol-gel lead-zirconate-titanate thin films
    Impey, SA
    Huang, Z
    Patel, A
    Beanland, R
    Shorrocks, NM
    Watton, R
    Whatmore, RW
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (04) : 2202 - 2208
  • [42] MICROSTRUCTURAL, COMPOSITIONAL AND ELECTRICAL CHARACTERIZATION OF FERROELECTRIC LEAD ZIRCONATE TITANATE THIN-FILMS
    HUFFMAN, M
    GEALY, FD
    KAMMERDINER, L
    ZURCHER, P
    ZHU, JG
    ALJASSIM, M
    ECHER, C
    FERROELECTRICS, 1992, 134 (1-4) : 303 - 312
  • [43] Micro-Raman characterization of the phase transition behavior in lanthanum doped lead titanate thin films
    Savvinov, A
    Bhaskar, S
    Majumder, SB
    Katiyar, RS
    INTEGRATED FERROELECTRICS, 2002, 42 : 397 - 404
  • [44] Ferroelectric properties of heterolayered lead zirconate titanate thin films
    Kartawidjaja, Fransiska Cecilia
    Zhou, Zhaohui
    Wang, John
    JOURNAL OF ELECTROCERAMICS, 2006, 16 (04) : 425 - 430
  • [45] Piezoelectric and dielectric reliability of lead zirconate titanate thin films
    Polcawich, RG
    Trolier-McKinstry, S
    JOURNAL OF MATERIALS RESEARCH, 2000, 15 (11) : 2505 - 2513
  • [46] Role of 90° domains in lead zirconate titanate thin films
    Ganpule, CS
    Nagarajan, V
    Li, H
    Ogale, AS
    Steinhauer, DE
    Aggarwal, S
    Williams, E
    Ramesh, R
    De Wolf, P
    APPLIED PHYSICS LETTERS, 2000, 77 (02) : 292 - 294
  • [47] Role of precursors in the formation of lead zirconate titanate thin films
    Kotova, N. M.
    Vorotilov, K. A.
    Seregin, D. S.
    Sigov, A. S.
    INORGANIC MATERIALS, 2014, 50 (06) : 612 - 616
  • [48] Fabrication of lead zirconate titanate thin films by inkjet printing
    Shimofuku, Akira
    Machida, Osamu
    Takeuchi, Atsushi
    Akiyama, Yoshikazu
    Ohta, Eiichi
    ELECTROCERAMICS IN JAPAN XVI, 2014, 582 : 7 - 10
  • [49] Role of precursors in the formation of lead zirconate titanate thin films
    N. M. Kotova
    K. A. Vorotilov
    D. S. Seregin
    A. S. Sigov
    Inorganic Materials, 2014, 50 : 612 - 616
  • [50] Piezoelectric and dielectric reliability of lead zirconate titanate thin films
    Ronald G. Polcawich
    Susan Trolier-McKinstry
    Journal of Materials Research, 2000, 15 : 2505 - 2513