Ferroelectric properties of heterolayered lead zirconate titanate thin films

被引:13
|
作者
Kartawidjaja, Fransiska Cecilia [1 ]
Zhou, Zhaohui [1 ]
Wang, John [1 ]
机构
[1] Natl Univ Singapore, Fac Engn, Dept Mat Sci & Engn, Singapore 117576, Singapore
关键词
heterolayered PZT thin films; sol-gel; ferroelectric behaviors; domain pinning;
D O I
10.1007/s10832-006-9892-2
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Heterolayered Pb(Zr1 - x Ti (x) )O-3 thin films consisting of alternating PbZr0.7Ti0.3O3 and PbZr0.3Ti0.7O3 layers were successfully deposited via a multistep sol-gel route assisted by spin-coating. These heterolayered PZT films, when annealed at a temperature in the range of 600-700 degrees C show (001)/(100) preferred orientation, demonstrate desired ferroelectric and dielectric properties. The most interesting ferroelectric and dielectric properties were obtained from the six-layered PZT thin film annealed at 650 degrees C, which exhibits a remanent polarization of 47.7 mu C/cm(2) and a dielectric permittivity of 1002 at 100 Hz. Reversible polarization constituents a considerably high contribution towards the ferroelectric hysteresis of the heterolayered PZT films, as shown by studies obtained from C-V and AC measurement.
引用
收藏
页码:425 / 430
页数:6
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