Compositional analysis of GaAs/AlGaAs heterostructures using quantitative scanning transmission electron microscopy

被引：18
|
作者：
Kauko, H. [1 ]
Zheng, C. L. [2 ]
Zhu, Y. [2 ,3 ]
Glanvill, S. [2 ]
Dwyer, C. [2 ,4 ,5 ]
Munshi, A. M. [6 ]
Fimland, B. O. [6 ]
van Helvoort, A. T. J. [1 ]
Etheridge, J. [2 ,3 ]
机构：
[1] Norwegian Univ Sci & Technol NTNU, Dept Phys, Trondheim, Norway
[2] Monash Univ, Monash Ctr Electron Microscopy, Clayton, Vic 3800, Australia
[3] Monash Univ, Dept Mat Engn, Clayton, Vic 3800, Australia
[4] Forschungszentrum Julich, Ernst Ruska Ctr Microscopy & Spect Electrons, D-52425 Julich, Germany
[5] Forschungszentrum Julich, Peter Grunberg Inst, D-52425 Julich, Germany
[6] Norwegian Univ Sci & Technol NTNU, Dept Elect & Telecommun, Trondheim, Norway
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 23期
基金：
澳大利亚研究理事会;
关键词：
DARK-FIELD IMAGES; STEM; NANOWIRES; ALLOY; GAAS; SEMICONDUCTORS; ABERRATION; THICKNESS; CRYSTALS;
D O I：
10.1063/1.4838556
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate a method for compositional mapping of AlxGa1-xAs heterostructures with high accuracy and unit cell spatial resolution using quantitative high angle annular dark field scanning transmission electron microscopy. The method is low dose relative to spectroscopic methods and insensitive to the effective source size and higher order lens aberrations. We apply the method to study the spatial variation in Al concentration in cross-sectioned GaAs/AlGaAs core-shell nanowires and quantify the concentration in the Al-rich radial band and the AlGaAs shell segments. (C) 2013 AIP Publishing LLC.
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页数：4
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