Characterization of core-shell GaAs/AlGaAs nanowire heterostructures using advanced electron microscopy

被引：9
|
作者：
Tambe, M. J. [1 ]
Allard, L. F. [2 ]
Gradecak, S. [1 ]
机构：
[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
[2] Oak Ridge Natl Lab, High Temp Mat Lab, Oak Ridge, TN 37831 USA
来源：
16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS | 2010年 / 209卷
基金：
美国国家科学基金会;
关键词：
D O I：
10.1088/1742-6596/209/1/012033
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
To explore the unique properties of the nanoscale, advanced fabrication and characterization techniques are required Specifically analyses in two orthogonal directions, plan-view and cross-section, were used to prove the core-shell morphology of GaAs/AlGaAs nanowires and determine their cross-section to be hexagonal High-resolution transmission electron microscopy and high angle annular dark field scanning transmission electron microscopy confirmed the core-shell interface to be defect-free, coherent, and sharp (<nm) Energy dispersive X-ray spectroscopy determined the shell composition to be Al0 9Ga0 1As uniformly along the length of the nanowire These results demonstrate the power of electron microscopy to aid the development of semiconductor nanotechnology
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