Scanning tunneling microscopy of undoped GaAs/AlGaAs heterostructures under laser irradiation

被引：0

作者：

Takahashi, T ^{[1
]}

Yoshita, M ^{[1
]}

Sakaki, H ^{[1
]}

机构：

[1] UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 04期

关键词：

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Scanning tunneling microscopy (STM) of cleaved surfaces of undoped GaAs/AlGaAs heterostructures has been performed under laser irradiation, by which the tunneling current is strongly enhanced via photocarrier generation. Clear STM images are obtained with high contrast between the GaAs and the AlGaAs layers when the laser wavelength is 800 nm which creates photocarriers only in the GaAs regions. It is found that the STM tip height difference between the GaAs and the AlGaAs regions reaches as large as 25 nm in the constant-current mode. (C) 1996 American Institute of Physics.

引用

页码：502 / 504

页数：3

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