TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF GAAS/ALGAAS HETEROSTRUCTURES REGROWN ON PATTERNED SUBSTRATES

被引：4

作者：

DILGER, M ^{[1
]}

HOHENSTEIN, M ^{[1
]}

PHILLIPP, F ^{[1
]}

EBERL, K ^{[1
]}

KURTENBACH, A ^{[1
]}

GRAMBOW, P ^{[1
]}

LEHMANN, A ^{[1
]}

HEITMANN, D ^{[1
]}

VONKLITZING, K ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-70569 STUTTGART,GERMANY

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 12期

关键词：

D O I：

10.1088/0268-1242/9/12/016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The structure of GaAs quantum wires embedded in Al0.33Ga0.67As and the interfaces between the wires and the matrix were investigated by transmission electron microscopy (TEM) in diffraction-contrast and high-resolution (HREM) modes. The quantum wires were regrown by molecular beam epitaxy (MBE) On patterned Al0.33Ga0.67As buffer layers on GaAs substrates. Depending on the orientation of the quantum wires within the (100) surface of the substrate, different characteristic facets develop during MBE regrowth of the mesa-etched samples. The surface structure for [011]- and [0 (1) over bar 1]-oriented wires is dominated by (111) and (311) facets. The (111) planar defects like stacking faults and twins are frequently observed in the case of (111) facet growth. Mainly (110) facet formation is found for [001]- and [010]-oriented wires; planar defects are not detected in this case.

引用

页码：2258 / 2262

页数：5

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