Stranski-Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy

被引：31

作者：

Simeonov, D ^{[1
]}

Feltin, E ^{[1
]}

Carlin, JF ^{[1
]}

Butté, R ^{[1
]}

Ilegems, M ^{[1
]}

Grandjean, N ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 08期

关键词：

D O I：

10.1063/1.2189975

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a thorough study of the growth of self-assembled GaN/AlN quantum dots (QDs). These QDs were grown on sapphire substrates using the Stranski-Krastanov (SK) growth mode by means of low-pressure metal organic vapor phase epitaxy. The influence of the V/III ratio on the QD height, shape, and density is studied. Emissions above (3.8 eV) and below (2.8 eV) the band gap of GaN are observed for small dots (1.3 nm) and large ones (4.4 nm), respectively. Special emphasis was given to the SK growth mode transition and the parameters influencing the QD formation. The two-dimensional-three-dimensional transition is studied continuously by photoluminescence mapping showing its high sensitivity to the V/III ratio. (C) 2006 American Institute of Physics. (C) 2006 American Institute of Physics.

引用

页数：6

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