Highly-Integrated Scalable D-band Receiver Front-End Modules in a 130 nm SiGe Technology for Imaging and Radar Applications

被引：0

作者：

Aguilar, Erick ^{[1
]}

Issakov, Vadim ^{[2
]}

Weigel, Robert ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Inst Tech Elect, D-90132 Erlangen, Germany

[2] Univ Magdeburg, Magdeburg, Germany

来源：

PROCEEDINGS OF THE 2020 GERMAN MICROWAVE CONFERENCE (GEMIC) | 2020年

关键词：

mm-wave; SiGe; receiver; imaging; radar;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two-highly integrated, scalable D-Band receiver front-ends based on active and passive baluns which integrate a D-Band signal generator developed in a 130 nm SiGe technology are presented. The presented circuits exhibit a wide tuning range of 19 GHz around 110 GHz and achieve high conversion gains >20 dB and >12 dB for the active-based an passive-based approaches correspondingly. The new chips offer robust solutions for high-gain or high-linearity receivers while showing an extremely compact form factor. Both chips show competitive performance compared with state-of-the-art solutions. Due to their highly reduced area without compromising the power consumption, they can be directly integrated into high-density sensor arrays for imaging and radar applications.

引用

页码：68 / 71

页数：4

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