A Wideband Ka-band Receiver Front-End in 90-nm CMOS Technology

被引：0

作者：

Li, Zhiqun ^{[1
]}

Cao, Jia ^{[1
]}

Li, Qin ^{[1
]}

Wang, Zhigong ^{[1
]}

机构：

[1] Southeast Univ, Minist Educ, Inst RF & OE ICs, Engn Res Ctr RF ICs & RF Syst, Nanjing 210096, Jiangsu, Peoples R China

来源：

2013 8TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2013年

关键词：

CMOS; Ka-band; wideband LNA; Mixer; IF amplifier; Front-End; Receiver;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a Ka-band receiver front-end aimed for the Atacama Large Millimeter Array (ALMA) system using 90-nm LP CMOS technology. The front-end chip consists of a single-ended low-noise amplifier (LNA), a double-balanced mixer and a single-ended intermediate-frequency (IF) amplifier. The measured results show the chip achieves a conversion gain better than 29 dB for input frequencies between 30.5 to 40 GHz when driven with a fixed 30 GHz LO signal, a IIP3 around -25.4 dBm at 35 GHz and the LO-RF and LO-IF port isolation better than 65 dB in the 30-40 GHz frequency band under 1.2 V power supply. The chip size is 1.26 mm(2).

引用

页码：5 / 8

页数：4

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