Bridged-Grain Solid-Phase-Crystallized Polycrystalline-Silicon Thin-Film Transistors

被引：32
|
作者：
Zhou, Wei [1 ]
Meng, Zhiguo [1 ]
Zhao, Shuyun [1 ]
Zhang, Meng [1 ]
Chen, Rongsheng [1 ]
Wong, Man [1 ]
Kwok, Hoi-Sing [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 10期
关键词：
Bridged grain (BG); polycrystalline silicon (poly-Si); thin-film transistors (TFTs); HIGH-PERFORMANCE; PLASMA PASSIVATION; DRAIN; TFTS;
D O I：
10.1109/LED.2012.2210019
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Novel bridged-grain (BG) technique is applied in the fabrication of low-temperature solid-phase-crystallized polycrystalline-silicon thin-film transistors. As a result of improved current flow and reduction of high drain electric field, the subthreshold slope, threshold voltage, maximum field-effect mobility, leakage current, and on-off ratio are greatly improved. Mechanisms of BG conduction are studied in detail.
引用
收藏
页码：1414 / 1416
页数：3
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