Bridged-Grain Solid-Phase-Crystallized Polycrystalline-Silicon Thin-Film Transistors

被引：32

作者：

Zhou, Wei ^{[1
]}

Meng, Zhiguo ^{[1
]}

Zhao, Shuyun ^{[1
]}

Zhang, Meng ^{[1
]}

Chen, Rongsheng ^{[1
]}

Wong, Man ^{[1
]}

Kwok, Hoi-Sing ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 10期

关键词：

Bridged grain (BG); polycrystalline silicon (poly-Si); thin-film transistors (TFTs); HIGH-PERFORMANCE; PLASMA PASSIVATION; DRAIN; TFTS;

D O I：

10.1109/LED.2012.2210019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Novel bridged-grain (BG) technique is applied in the fabrication of low-temperature solid-phase-crystallized polycrystalline-silicon thin-film transistors. As a result of improved current flow and reduction of high drain electric field, the subthreshold slope, threshold voltage, maximum field-effect mobility, leakage current, and on-off ratio are greatly improved. Mechanisms of BG conduction are studied in detail.

引用

页码：1414 / 1416

页数：3

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