Milliwatt power 233nm AlGaN-based deep UV-LEDs on sapphire substrates

被引：68

作者：

Lobo-Ploch, Neysha ^{[1
,2
]}

Mehnke, Frank ^{[3
,4
]}

Sulmoni, Luca ^{[3
]}

Cho, Hyun Kyong ^{[1
]}

Guttmann, Martin ^{[3
]}

Glaab, Johannes ^{[1
]}

Hilbrich, Katrin ^{[1
]}

Wernicke, Tim ^{[3
]}

Einfeldt, Sven ^{[1
]}

Kneissl, Michael ^{[1
,3
]}

机构：

[1] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany

[2] UVphoton NT GmbH, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany

[3] Tech Univ Berlin, Inst Solid State Phys, Hardenbergstr 36, D-10623 Berlin, Germany

[4] Georgia Inst Technol, Sch Elect & Comp Engn, 777 Atlantic Dr, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2020年 / 117卷 / 11期

关键词：

21;

D O I：

10.1063/5.0015263

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep UV-LEDs (DUV-LEDs) emitting at 233nm with an emission power of (1.9 +/- 0.3) mW and an external quantum efficiency of (0.36 +/- 0.07) % at 100mA are presented. The entire DUV-LED process chain was optimized including the reduction of the dislocation density using epitaxially laterally overgrown AlN/sapphire substrates, development of vanadium-based low resistance n-metal contacts, and employment of high thermally conductive AlN packages. Estimated device lifetimes above 1500 h are achieved after a burn-in of 100 h. With the integration of a UV-transparent lens, a strong narrowing of the far-field pattern was achieved with a radiant intensity of 3 mW/sr measured at 20mA.

引用

页数：5

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