Milliwatt power 233nm AlGaN-based deep UV-LEDs on sapphire substrates

被引：68
|
作者：
Lobo-Ploch, Neysha [1 ,2 ]
Mehnke, Frank [3 ,4 ]
Sulmoni, Luca [3 ]
Cho, Hyun Kyong [1 ]
Guttmann, Martin [3 ]
Glaab, Johannes [1 ]
Hilbrich, Katrin [1 ]
Wernicke, Tim [3 ]
Einfeldt, Sven [1 ]
Kneissl, Michael [1 ,3 ]
机构：
[1] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany
[2] UVphoton NT GmbH, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany
[3] Tech Univ Berlin, Inst Solid State Phys, Hardenbergstr 36, D-10623 Berlin, Germany
[4] Georgia Inst Technol, Sch Elect & Comp Engn, 777 Atlantic Dr, Atlanta, GA 30332 USA
来源：
APPLIED PHYSICS LETTERS | 2020年 / 117卷 / 11期
关键词：
21;
D O I：
10.1063/5.0015263
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Deep UV-LEDs (DUV-LEDs) emitting at 233nm with an emission power of (1.9 +/- 0.3) mW and an external quantum efficiency of (0.36 +/- 0.07) % at 100mA are presented. The entire DUV-LED process chain was optimized including the reduction of the dislocation density using epitaxially laterally overgrown AlN/sapphire substrates, development of vanadium-based low resistance n-metal contacts, and employment of high thermally conductive AlN packages. Estimated device lifetimes above 1500 h are achieved after a burn-in of 100 h. With the integration of a UV-transparent lens, a strong narrowing of the far-field pattern was achieved with a radiant intensity of 3 mW/sr measured at 20mA.
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页数：5
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