Milliwatt power 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN templates

被引：23
|
作者：
Hirayama, Hideki [1 ,2 ,3 ]
Norimatsu, Jun [1 ,2 ,3 ]
Noguchi, Norimichi [1 ,2 ,3 ]
Fujikawa, Sachie [1 ,2 ,3 ]
Takano, Takayoshi [1 ,4 ]
Tsubaki, Kenji [1 ,4 ]
Kamata, Norihiko [2 ,3 ]
机构：
[1] RIKEN, 2-1 Hirosawa, Wako, Saitama 3510198, Japan
[2] Saitama Univ, Sakura Ku, Saitama, Saitama 3888570, Japan
[3] JST, CREST, Kawaguchi, Saitama 3220012, Japan
[4] Matsushita Elect Works Ltd, Osaka 5718686, Japan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷
关键词：
LIGHT-EMITTING-DIODES; LOW-DISLOCATION-DENSITY; VAPOR-PHASE EPITAXY; SUPERLATTICE; OPERATION; SAPPHIRE; EMISSION;
D O I：
10.1002/pssc.200880959
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We demonstrated CW milliwatt power operations of 270 nm-band AlGaN multi-quantum well (MQW) deep-ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on epitaxial lateral overgrowth (ELO) AlN templates on sapphire. An initial AlN stripe layer was grown directly on sapphire by using ammonia (NH3) pulse-flow multilayer (ML) growth method. An AlN stripe structure with a width of 5 mu m and a spacing of 3 mu m was completely coalesced after the growth of an approximately 15 mu m-thick ELO-AlN layer grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). The edge-type threading dislocation density (TDD) of the wing region of the ELO-AlN layer was 3x10(8) cm(-2), as observed by cross-sectional transmission electron microscope (TEM) image. The maximum output power of 2.7 mW was obtained from an AlGaN MQW LED with emission wavelength at 273 nm fabricated on ELO-AlN template under room temperature (RT) CW operation. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：S474 / S477
页数：4
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