Milliwatt power 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN templates

被引：23
|
作者：
Hirayama, Hideki [1 ,2 ,3 ]
Norimatsu, Jun [1 ,2 ,3 ]
Noguchi, Norimichi [1 ,2 ,3 ]
Fujikawa, Sachie [1 ,2 ,3 ]
Takano, Takayoshi [1 ,4 ]
Tsubaki, Kenji [1 ,4 ]
Kamata, Norihiko [2 ,3 ]
机构：
[1] RIKEN, 2-1 Hirosawa, Wako, Saitama 3510198, Japan
[2] Saitama Univ, Sakura Ku, Saitama, Saitama 3888570, Japan
[3] JST, CREST, Kawaguchi, Saitama 3220012, Japan
[4] Matsushita Elect Works Ltd, Osaka 5718686, Japan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷
关键词：
LIGHT-EMITTING-DIODES; LOW-DISLOCATION-DENSITY; VAPOR-PHASE EPITAXY; SUPERLATTICE; OPERATION; SAPPHIRE; EMISSION;
D O I：
10.1002/pssc.200880959
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We demonstrated CW milliwatt power operations of 270 nm-band AlGaN multi-quantum well (MQW) deep-ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on epitaxial lateral overgrowth (ELO) AlN templates on sapphire. An initial AlN stripe layer was grown directly on sapphire by using ammonia (NH3) pulse-flow multilayer (ML) growth method. An AlN stripe structure with a width of 5 mu m and a spacing of 3 mu m was completely coalesced after the growth of an approximately 15 mu m-thick ELO-AlN layer grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). The edge-type threading dislocation density (TDD) of the wing region of the ELO-AlN layer was 3x10(8) cm(-2), as observed by cross-sectional transmission electron microscope (TEM) image. The maximum output power of 2.7 mW was obtained from an AlGaN MQW LED with emission wavelength at 273 nm fabricated on ELO-AlN template under room temperature (RT) CW operation. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：S474 / S477
页数：4
相关论文
共 26 条
  • [21] Current-induced degradation process in (In)AlGaN-based deep-UV light-emitting diode fabricated on AlN/sapphire template
    Dalapati, Pradip
    Yamamoto, Kosuke
    Egawa, Takashi
    Miyoshi, Makoto
    OPTICAL MATERIALS, 2020, 109
  • [22] Marked efficiency enhancement of 222 nm AlGaN-based deep-UV LEDs for disinfection of SARS-2 (Covid-19)
    Jamil, Tariq
    Usman, Muhammad
    Jamal, Habib Ullah
    Khan, Sibghatullah
    2021 INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD), 2021, : 67 - 68
  • [23] High-Temperature p-Type Polarization Doped AlGaN Cladding for sub-250 nm deep-UV Quantum Well LEDs by MBE
    Bharadwaj, Shyam
    Islam, S. M.
    Lee, Kevin
    Devine, Andrew
    Protasenko, Vladimir
    Rouvimov, Sergei
    Xing, Huili
    Jena, Debdeep
    2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2017,
  • [24] Milliwatt-power sub-230-nm AlGaN LEDs with >1500 h lifetime on a single-crystal AlN substrate with many quantum wells for effective carrier injection
    Kobayashi, Hirotsugu
    Sato, Kosuke
    Okuaki, Yusuke
    Lee, TaeGi
    Morishita, Tomohiro
    Goto, Hiromasa
    Kuze, Naohiro
    APPLIED PHYSICS LETTERS, 2023, 122 (10)
  • [25] Solar-blind deep-UV band-pass filter (250-350 nm) consisting of a metal nano-grid fabricated by nanoimprint lithography
    Li, Wen-Di
    Chou, Stephen Y.
    OPTICS EXPRESS, 2010, 18 (02): : 931 - 937
  • [26] Fabrication of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Silicon Substrate with Slant Field Plates Using Deep-UV Lithography Featuring 5W/mm Power Density at X-band
    Chang, Chia-Hua
    Hsu, Heng-Tung
    Huang, Lu-Che
    Chiang, Che-Yang
    Chang, Edward Yi
    2012 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC 2012), 2012, : 941 - 943
123