Ferromagnetic semiconductor InMnAs layers grown by pulsed laser deposition on GaAs

被引：8

作者：

Danilov, Yu A. ^{[1
]}

Kudrin, A. V. ^{[1
]}

Vikhrova, O. V. ^{[1
]}

Zvonkov, B. N. ^{[1
]}

Drozdov, Yu N. ^{[2
]}

Sapozhnikov, M. V. ^{[2
]}

Nicolodi, S. ^{[3
]}

Zhiteytsev, E. R. ^{[4
,5
]}

Santos, N. M. ^{[4
,5
]}

Carmo, M. C. ^{[4
,5
]}

Sobolev, N. A. ^{[4
,5
]}

机构：

[1] Nizhnii Novgorod State Univ, Physicotech Res Inst, Nizhnii Novgorod 603950, Russia

[2] RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

[3] Univ Fed Rio Grande do Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil

[4] Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal

[5] Univ Aveiro, I3N, P-3810193 Aveiro, Portugal

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2009年 / 42卷 / 03期

关键词：

DILUTED MAGNETIC SEMICONDUCTOR; (IN; MN)AS THIN-FILMS; ROOM-TEMPERATURE; RESONANCE; MN;

D O I：

10.1088/0022-3727/42/3/035006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InMnAs layers were grown in a quartz reactor by YAG: Nd pulsed laser ablation of solid targets ( InAs and Mn) in hydrogen and arsine flow. The crystal quality and the phase composition were analysed by x-ray diffraction. The electrical properties were derived from the Hall effect measurements. The InMnAs magneto-optical and magnetic properties were studied by means of the Kerr effect, alternating gradient field magnetometry and ferromagnetic ( FM) resonance measurements. The dependence of the electrical and magnetic properties of the layers on the Mn content was investigated. The InMnAs layers exhibit FM properties at temperatures at least up to 300 K.

引用

页数：5

共 50 条

[31] EPITAXIAL BATIO3 MGO STRUCTURE GROWN ON GAAS(100) BY PULSED-LASER DEPOSITION
NASHIMOTO, K
FORK, DK
PONCE, FA
TRAMONTANA, JC
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9B): : 4099 - 4102
[32] Thin film epitaxy of high quality ferromagnetic semiconductor EuO using pulsed laser deposition equipped with Nd:YAG laser
Sahoo, Ramchandra
Sato, Yusuke
Sasaki, Satoshi
Negishi, Masamichi
Takahashi, Ryota
Fukumura, Tomoteru
CHEMISTRY LETTERS, 2025, 54 (02)
[33] Optical and magneto-optical spectroscopy of thin ferromagnetic InMnAs layers
E. A. Gan’shina
L. L. Golik
V. I. Kovalev
Z. E. Kun’kova
B. N. Zvonkov
A. N. Vinogradov
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2009, 3 : 503 - 506
[34] Pulsed laser deposition of uniform semiconductor nanodot arrays
Manisha Gupta
Vincent Sauer
Ying Yin Tsui
Applied Physics A, 2013, 110 : 817 - 821
[35] Complex semiconductor compound targets for pulsed laser deposition
Dittrich, H.
Klose, M.
Brieger, M.
Schaffler, R.
Schock, H.W.
Materials Science Forum, 1995, 173-174 : 129 - 134
[36] Pulsed laser deposition of uniform semiconductor nanodot arrays
Gupta, Manisha
Sauer, Vincent
Tsui, Ying Yin
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2013, 110 (04): : 817 - 821
[37] Electrical and optical properties of thin ZnO shell layers on GaP nanorods grown by pulsed laser deposition
Bruncko, Jaroslav
Kovac, Jaroslav Jr Jr
Michalka, Miroslav
Netrvalova, Marie
Kovac, Jaroslav
Vincze, Andrej
Novak, Jozef
THIN SOLID FILMS, 2021, 725
[38] Apparatus for pulsed laser deposition of semiconductor thin films
Oszwaldowski, M
Berus, T
Sydorczuk, P
Rzeszutek, J
REVIEW OF SCIENTIFIC INSTRUMENTS, 2003, 74 (06): : 3160 - 3163
[39] PULSED-LASER DEPOSITION OF EPITAXIAL LAYERS OF ZNSE
DEISS, JL
CHERGUI, A
KOUTTI, L
LOISON, JL
ROBINO, M
GRUN, JB
APPLIED SURFACE SCIENCE, 1995, 86 (1-4) : 149 - 153
[40] Zinc oxide nanostructures grown by pulsed laser deposition
D. Valerini
A. P. Caricato
M. Lomascolo
F. Romano
A. Taurino
T. Tunno
M. Martino
Applied Physics A, 2008, 93 : 729 - 733

← 1 2 3 4 5 →