Ferromagnetic semiconductor InMnAs layers grown by pulsed laser deposition on GaAs

被引：8

作者：

Danilov, Yu A. ^{[1
]}

Kudrin, A. V. ^{[1
]}

Vikhrova, O. V. ^{[1
]}

Zvonkov, B. N. ^{[1
]}

Drozdov, Yu N. ^{[2
]}

Sapozhnikov, M. V. ^{[2
]}

Nicolodi, S. ^{[3
]}

Zhiteytsev, E. R. ^{[4
,5
]}

Santos, N. M. ^{[4
,5
]}

Carmo, M. C. ^{[4
,5
]}

Sobolev, N. A. ^{[4
,5
]}

机构：

[1] Nizhnii Novgorod State Univ, Physicotech Res Inst, Nizhnii Novgorod 603950, Russia

[2] RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

[3] Univ Fed Rio Grande do Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil

[4] Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal

[5] Univ Aveiro, I3N, P-3810193 Aveiro, Portugal

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2009年 / 42卷 / 03期

关键词：

DILUTED MAGNETIC SEMICONDUCTOR; (IN; MN)AS THIN-FILMS; ROOM-TEMPERATURE; RESONANCE; MN;

D O I：

10.1088/0022-3727/42/3/035006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InMnAs layers were grown in a quartz reactor by YAG: Nd pulsed laser ablation of solid targets ( InAs and Mn) in hydrogen and arsine flow. The crystal quality and the phase composition were analysed by x-ray diffraction. The electrical properties were derived from the Hall effect measurements. The InMnAs magneto-optical and magnetic properties were studied by means of the Kerr effect, alternating gradient field magnetometry and ferromagnetic ( FM) resonance measurements. The dependence of the electrical and magnetic properties of the layers on the Mn content was investigated. The InMnAs layers exhibit FM properties at temperatures at least up to 300 K.

引用

页数：5

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