Gate-All-Around Single-Crystal-Like Poly-Si Nanowire TFTs With a Steep-Subthreshold Slope

被引：9

作者：

Liu, Tung-Yu ^{[1
]}

Lo, Shen-Chuan ^{[2
]}

Sheu, Jeng-Tzong ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Inst Nanotechnol, Hsinchu 30050, Taiwan

[2] Ind Technol Res Inst, Mat & Chem Res Labs, Hsinchu 31040, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 04期

关键词：

Gate-all-around (GAA); nanowire (NW); single-crystal-like (SCL); thin film transistor (TFT); THIN-FILM TRANSISTORS; POLYCRYSTALLINE SILICON; PERFORMANCE;

D O I：

10.1109/LED.2013.2247737

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the characteristics of single-crystallike (SCL) poly-Si nanowire (SCL poly-Si NW) thin-film-transistors with gate-all-around (GAA) structures. The GAA SCL poly-Si NWs are prepared by a modified sidewall spacer process utilizing an amorphous silicon (alpha-Si) mesa structure. The combination of the high surface-to-volume ratio of the NW and a nominal gate length of 0.25 mu m lead to clear improvement in electrical performance, including a steep subthreshold swing (90 +/- 15 mV/dec), a virtual absence of drain-induced barrier lowering (21 +/- 13 mV/V), and a very high ON/OFF current ratio similar to 7 x 10(7) (V-D = 1 V, V-G = 3 V).

引用

页码：523 / 525

页数：3

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