Modification of thin SIMOX film into β-FeSi2 via dry processes

被引：0
|
作者：
Shimura, K
Yamaguchi, K
Sasase, M
Yamamoto, H
Shamoto, S
Hojou, K
机构：
[1] Japan Atom Energy Res Inst, Dept Mat Sci, Tokai, Ibaraki 3191195, Japan
[2] Wakasa Wan Energy Res Ctr, Tsuruga 9140192, Japan
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2006年 / 242卷 / 1-2期
关键词：
ion beam sputter deposition; beta-FeSi2; SIMOX;
D O I：
10.1016/j.nimb.2005.08.169
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The aim of this study is to fabricate a beta-FeSi2 film on an insulator via dry processes. The film is fabricated by modifying the Si-over-layer of separation by implanted oxygen (SIMOX) substrate through deposition of iron (Fe). The concentration of oxygen (O) in the film that originated from the buried oxide (BOX) layer appears significant. Employing a template method, in which, Fe deposition is followed by FeSi2 deposition made it possible to fabricate relatively thick film with negligible O concentration. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：676 / 678
页数：3
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