Resonant energy transfer from nanocrystal Si to β-FeSi2 in hybrid Si/β-FeSi2 film

被引：3
|
作者：
He Jiu-Yang [1 ]
Zhang Qi-Zhen [2 ]
Wu Xing-Long [1 ]
Paul, Chu K. [3 ]
机构：
[1] Nanjing Univ, Dept Phys, Inst Acoust, Key Lab Modern Acoust,MOE, Nanjing 210093, Jiangsu, Peoples R China
[2] Nanjing Normal Univ, Dept Phys, Nanjing 210046, Jiangsu, Peoples R China
[3] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
来源：
CHINESE PHYSICS B | 2013年 / 22卷 / 10期
基金：
中国国家自然科学基金;
关键词：
beta-FeSi2; nanocrystal; photoluminescence; resonant charge transfer; SEMICONDUCTOR; LUMINESCENCE; EMISSION;
D O I：
10.1088/1674-1056/22/10/106804
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The photoluminescence (PL) characteristics of hybrid beta-FeSi2/Si and pure beta-FeSi2 films fabricated by pulsed laser deposition at 20 K are investigated. The intensity of the 1.54-mu m PL from the former is enhanced, but the enhancement vanishes when the excitation wavelength is larger than the widened band gap of Si nanocrystal. Time-resolved PL decay measurements reveal that the lifetime of the photo-excited carriers in the hybrid beta-FeSi2/Si film is longer than that in the pure beta-FeSi2 film, providing evidence that the PL enhancement results from the resonant charge transfer from nanocrystalline Si to beta-FeSi2.
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页数：4
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