Resonant energy transfer from nanocrystal Si to β-FeSi2 in hybrid Si/β-FeSi2 film

被引：0
|
作者：
何久洋 [1 ]
张祺桢 [2 ]
吴兴龙 [1 ]
朱剑豪 [3 ]
机构：
[1] Key Laboratory of Modern Acoustics,MOE,Institute of Acoustics,Department of Physics,Nanjing University
[2] Department of Physics,Nanjing Normal University
[3] Department of Physics and Materials Science,City University of Hong Kong
来源：
Chinese Physics B | 2013年 / 10期
基金：
中国国家自然科学基金;
关键词：
β-FeSi2nanocrystal; photoluminescence; resonant charge transfer;
D O I：
暂无
中图分类号：
O613.71 [碳C];
学科分类号：
070301 ; 081704 ;
摘要：
The photoluminescence(PL) characteristics of hybrid β-FeSi2/Si and pure β-FeSi2films fabricated by pulsed laser deposition at 20 K are investigated.The intensity of the 1.54-μm PL from the former is enhanced,but the enhancement vanishes when the excitation wavelength is larger than the widened band gap of Si nanocrystal.Time-resolved PL decay measurements reveal that the lifetime of the photo-excited carriers in the hybrid β-FeSi2/Si film is longer than that in the pure β-FeSi2film,providing evidence that the PL enhancement results from the resonant charge transfer from nanocrystalline Si to β-FeSi2.
引用
收藏
页码：56 / 59
页数：4
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