Resonant energy transfer from nanocrystal Si to β-FeSi2 in hybrid Si/β-FeSi2 film

被引：0

作者：

何久洋 ^{[1
]}

张祺桢 ^{[2
]}

吴兴龙 ^{[1
]}

朱剑豪 ^{[3
]}

机构：

[1] Key Laboratory of Modern Acoustics,MOE,Institute of Acoustics,Department of Physics,Nanjing University

[2] Department of Physics,Nanjing Normal University

[3] Department of Physics and Materials Science,City University of Hong Kong

来源：

Chinese Physics B | 2013年 / 10期

基金：

中国国家自然科学基金;

关键词：

β-FeSi2nanocrystal; photoluminescence; resonant charge transfer;

D O I：

暂无

中图分类号：

O613.71 [碳C];

学科分类号：

070301 ; 081704 ;

摘要：

The photoluminescence(PL) characteristics of hybrid β-FeSi2/Si and pure β-FeSi2films fabricated by pulsed laser deposition at 20 K are investigated.The intensity of the 1.54-μm PL from the former is enhanced,but the enhancement vanishes when the excitation wavelength is larger than the widened band gap of Si nanocrystal.Time-resolved PL decay measurements reveal that the lifetime of the photo-excited carriers in the hybrid β-FeSi2/Si film is longer than that in the pure β-FeSi2film,providing evidence that the PL enhancement results from the resonant charge transfer from nanocrystalline Si to β-FeSi2.

引用

页码：56 / 59

页数：4

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