One of the potentially optimal interfaces of β-FeSi2/Si

被引：1
|
作者：
Zhu, YM [1 ]
Zhang, WZ [1 ]
Ye, F [1 ]
机构：
[1] Tsing Hua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2005年 / 279卷 / 1-2期
基金：
中国国家自然科学基金;
关键词：
interfacial structure; lattice matching; steps; tilt; heteroepitaxial growth; semiconducting silicon-based compound;
D O I：
10.1016/j.jcrysgro.2005.02.023
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A possible optimal epitaxial relationship between the beta-FeSi2 film and a Si substrate was determined using the Delta g parallelism rule and a CCSL model. The predicted interface exhibits a good lattice matching, containing a secondary invariant line lying in an irrational orientation of [-2 -2.9 2.9](Si). The corresponding interface (-2.9 1 - 1)(Si), which defines the plane of the Si substrate, must contain steps. This interface may contain a set of the secondary edge dislocations with the Burgers vector of [0 1 0](beta)/2 in a spacing of 26 nm to accommodate the small (1.5%) misfit between [0 1 0](beta) and [0 - 1 - 1](Si). Since the overall interfacial misfit is small, a high-quality beta-FeSi2 film will be possibly obtained by epitaxial growth on the special stepped Si substrate. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：129 / 139
页数：11
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